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陈成/刁东风等在APL发表电子刻蚀碳膜新型纳米制造技术阅读次数 [911] 发布时间 :2016-07-28 11:43:42

我所论文:Low energy electron irradiation induced carbon etching: Triggering carbon film reacting with oxygen from SiO2 substrate,发表于国际期刊Applied Physics Letters

Low energy electron irradiation induced carbon etching: Triggering carbon film reacting with oxygen from SiO2 substrate

Applied Physics Letters 109(2016), 053104

Cheng Chen,Chao Wang, and Dongfeng Diao

We report low-energy (50–200 eV) electron irradiation induced etching of thin carbon films on a SiO2 substrate. The etchingmechanism was interpreted that electron irradiation stimulated the dissociation of the carbon film and SiO2, and then triggered the carbon film reacting with oxygen from the SiO2 substrate. A requirement for triggering the etching of the carbon film is that the incident electron penetrates through the whole carbon film, which is related to both irradiation energy and film thickness. This study provides a convenient electron-assisted etching with the precursor substrate, which sheds light on an efficient pathway to the fabrication of nanodevices and nanosurfaces.